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Universal curve of optimum thermoelectric figures of merit for bulk and low-dimensional semiconductors

机译:最佳热电元件的通用曲线   低维半导体

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摘要

Analytical formulas for thermoelectric figure of merit and power factor arederived based on the one-band model. We find that there is a directrelationship between the optimum figures of merit and the optimum power factorsof semiconductors despite of the fact that the two quantities are generallygiven by different values of chemical potentials. By introducing adimensionless parameter consisting of optimum power factor and lattice thermalconductivity (without electronic thermal conductivity), it is possible to unifyoptimum figures of merit of both bulk and low-dimensional semiconductors into asingle universal curve that covers lots of materials with differentdimensionalities.
机译:基于单频带模型推导了热电性能因数和功率因数的解析公式。我们发现,尽管最佳数量的优值与半导体的最佳功率因数之间存在直接关系,尽管事实上这两个数量通常由不同的化学势值给出。通过引入由最佳功率因数和晶格热导率(无电子热导率)组成的无因次参数,可以将大尺寸和低尺寸半导体的最佳品质因数统一为覆盖了许多不同尺寸材料的单一通用曲线。

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